IndiumV3, Chine, Analysis, bibRecord, 000513

High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions

Identifieur interne : 000513 ( Chine/Analysis ); précédent : 000512; suivant : 000514

High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions

Auteurs : RBID : Pascal:13-0003059

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Jonction supraconductrice, Décollement épitaxique, Dispositif nanofil, Contact ohmique, Caractéristique courant tension, Blocage Coulomb, Electrode commande, Supraconducteur, Tellurure de gallium, InAs, 7478N, 8107V, 8107B, 8535K, Nanofabrication.

English descriptors

KwdEn :
- Coulomb blockade, Gallium tellurides, Gates, III-V compound, III-V semiconductors, IV characteristic, Indium arsenides, Lift off, Nanofabrication, Nanostructured materials, Nanowire device, Nanowires, Ohmic contacts, Superconducting junctions, Superconductors.

Abstract

We report on the fabrication of InAs nanowires coupled to superconducting leads with high critical current and widely tunable conductance. We implemented a double lift-off nanofabrication method to get very short nanowire devices with Ohmic contacts. We observe very high critical currents of up to 800 nA in a wire with a diameter of 80 nm. The current- voltage characteristics of longer and suspended nanowires display either Coulomb blockade or supercurrent depending on a local gate voltage, combining different regimes of transport in a single device.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001510
to stream Main, to step Repository: 001B12
to stream Chine, to step Extraction: 000513

Links to Exploration step

Pascal:13-0003059

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions</title>
<author><name sortKey="Abay, Simon" uniqKey="Abay S">Simon Abay</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1>
<s2>412 96 Göteborg</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>412 96 Göteborg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Nilsson, Henrik" uniqKey="Nilsson H">Henrik Nilsson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Solid State Physics, Lund University, Box 118</s1>
<s2>221 00 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>221 00 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name>FAN WU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1>
<s2>412 96 Göteborg</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>412 96 Göteborg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Xu, H Q" uniqKey="Xu H">H. Q Xu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Solid State Physics, Lund University, Box 118</s1>
<s2>221 00 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>221 00 Lund</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Wilson, C M" uniqKey="Wilson C">C. M. Wilson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1>
<s2>412 96 Göteborg</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>412 96 Göteborg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Delsing, Per" uniqKey="Delsing P">Per Delsing</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1>
<s2>412 96 Göteborg</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Suède</country>
<wicri:noRegion>412 96 Göteborg</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0003059</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 13-0003059 INIST</idno>
<idno type="RBID">Pascal:13-0003059</idno>
<idno type="wicri:Area/Main/Corpus">001510</idno>
<idno type="wicri:Area/Main/Repository">001B12</idno>
<idno type="wicri:Area/Chine/Extraction">000513</idno>
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<seriesStmt><idno type="ISSN">1530-6984</idno>
<title level="j" type="abbreviated">Nano lett. : (Print)</title>
<title level="j" type="main">Nano letters : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Coulomb blockade</term>
<term>Gallium tellurides</term>
<term>Gates</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>IV characteristic</term>
<term>Indium arsenides</term>
<term>Lift off</term>
<term>Nanofabrication</term>
<term>Nanostructured materials</term>
<term>Nanowire device</term>
<term>Nanowires</term>
<term>Ohmic contacts</term>
<term>Superconducting junctions</term>
<term>Superconductors</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Jonction supraconductrice</term>
<term>Décollement épitaxique</term>
<term>Dispositif nanofil</term>
<term>Contact ohmique</term>
<term>Caractéristique courant tension</term>
<term>Blocage Coulomb</term>
<term>Electrode commande</term>
<term>Supraconducteur</term>
<term>Tellurure de gallium</term>
<term>InAs</term>
<term>7478N</term>
<term>8107V</term>
<term>8107B</term>
<term>8535K</term>
<term>Nanofabrication</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report on the fabrication of InAs nanowires coupled to superconducting leads with high critical current and widely tunable conductance. We implemented a double lift-off nanofabrication method to get very short nanowire devices with Ohmic contacts. We observe very high critical currents of up to 800 nA in a wire with a diameter of 80 nm. The current- voltage characteristics of longer and suspended nanowires display either Coulomb blockade or supercurrent depending on a local gate voltage, combining different regimes of transport in a single device.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0>
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<fA03 i2="1"><s0>Nano lett. : (Print)</s0>
</fA03>
<fA05><s2>12</s2>
</fA05>
<fA06><s2>11</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ABAY (Simon)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NILSSON (Henrik)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>FAN WU</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>XU (H. Q)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>WILSON (C. M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>DELSING (Per)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1>
<s2>412 96 Göteborg</s2>
<s3>SWE</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Division of Solid State Physics, Lund University, Box 118</s1>
<s2>221 00 Lund</s2>
<s3>SWE</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1>
<s2>Beijing 100871</s2>
<s3>CHN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>5622-5625</s1>
</fA20>
<fA21><s1>2012</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
<s2>27369</s2>
<s5>354000502937790300</s5>
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<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>25 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0003059</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
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<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the fabrication of InAs nanowires coupled to superconducting leads with high critical current and widely tunable conductance. We implemented a double lift-off nanofabrication method to get very short nanowire devices with Ohmic contacts. We observe very high critical currents of up to 800 nA in a wire with a diameter of 80 nm. The current- voltage characteristics of longer and suspended nanowires display either Coulomb blockade or supercurrent depending on a local gate voltage, combining different regimes of transport in a single device.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70D78N</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07V</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07B</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F18</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Jonction supraconductrice</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Superconducting junctions</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Décollement épitaxique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Lift off</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Desprendimiento epitáxico</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Dispositif nanofil</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Nanowire device</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Dispositivo nanohilo</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Contact ohmique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Ohmic contacts</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Blocage Coulomb</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Coulomb blockade</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Electrode commande</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gates</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Supraconducteur</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Superconductors</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Tellurure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium tellurides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7478N</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8535K</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Nanofabrication</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Nanofabrication</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="20" i2="3" l="SPA"><s0>Nanofabricación</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>007</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions

High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri